The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Mar. 31, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungmin Hwang, Hwaseong-si, KR;

Taewon Kang, Seoul, KR;

Dongsung Woo, Suwon-si, KR;

Taegon Lee, Seoul, KR;

Bongtae Park, Seoul, KR;

Jaejoo Shim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/115 (2017.01); H10B 12/00 (2023.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H10B 12/395 (2023.02); H10B 12/50 (2023.02); H01L 25/0657 (2013.01);
Abstract

A semiconductor device and a data storage system including the same, the semiconductor device including a substrate structure; a stack structure; a vertical memory structure; a vertical dummy structure; and an upper separation pattern, wherein hen viewed on a plane at a first height level, higher than a height level of a lowermost end of the upper separation pattern, the dummy channel layer includes a first dummy channel region facing the dummy data storage layer and a second dummy channel region facing the dummy data storage layer, the first dummy channel region having a thickness different from a thickness of the second dummy channel region.


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