The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 06, 2022
Stanley Electric Co., Ltd., Tokyo, JP;
Yuhzoh Tsuda, Tokyo, JP;
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Abstract
A vertical cavity light-emitting element includes a substrate, a first multilayer film reflecting mirror, a semiconductor structure layer, an electrode, an electrode layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The semiconductor structure layer includes a nitride semiconductor. The nitride semiconductor includes a first semiconductor layer that is formed on the first multilayer film reflecting mirror and is a first conductivity type, a second semiconductor layer that is formed on the first semiconductor layer and is the first conductivity type, a light-emitting layer that is formed on the second semiconductor layer and is configured to expose a region including an outer edge of a top surface of the second semiconductor layer, and a third semiconductor layer that is formed on the light-emitting layer and is a second conductivity type opposite to the first conductivity type. The electrode is formed on the top surface of the second semiconductor layer. The electrode layer is electrically in contact with the third semiconductor layer in one region of a top surface of the third semiconductor layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror. The second semiconductor layer has a larger resistance than the first semiconductor layer.