The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Feb. 16, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Shinya Watanabe, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/05087 (2013.01); H01L 2224/05096 (2013.01); H01L 2224/05098 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08146 (2013.01); H01L 2225/06544 (2013.01);
Abstract

A semiconductor device according to the present embodiment includes a substrate having a first semiconductor circuit provided thereon. First pads are located on the substrate. A first insulating layer is located on an outer side of each of the first pads. Second pads are respectively bonded to the first pads. A second insulating layer is located on an outer side of each of the second pads and is bonded to the first insulating layer. The first pads each include a first conductive material, and a first insulating material located on an inner side of the first conductive material on a bonding surface of the first pads and the second pads.


Find Patent Forward Citations

Watanabe, Shinya. (2025). Semiconductor device (U.S. Patent No. 12406950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12406950

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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