The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Feb. 17, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonjung Jang, Hwaseong-si, KR;

Chul-Yong Jang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 25/0652 (2013.01); H01L 2224/05025 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06586 (2013.01);
Abstract

Disclosed is a semiconductor device comprising a substrate including a first surface and a second surface that are opposite to each other, a via structure that penetrates the substrate, a first passivation pattern disposed on the first surface of the substrate and extending onto an upper sidewall of the via structure, and a second passivation pattern disposed on the first passivation pattern and exposing an uppermost surface of the first passivation pattern. At least a portion of the second passivation pattern is externally exposed. The first passivation pattern includes at least one selected from oxide and silicon oxide. The second passivation pattern includes at least one selected from nitride and silicon nitride.


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