The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 22, 2021
Imec Vzw, Leuven, BE;
Henricus Philipsen, Leuven, BE;
IMEC VZW, Leuven, BE;
Abstract
A method for manufacturing a semiconductor structure comprises providing a substrate that comprises a semiconductor layer and a filling material above the semiconductor layer. The filling material defines a plurality of trenches in a surface opposite the substrate. Feature material fills each trench and is selectively etched to form a pattern of recessed features. The substrate is then exposed to a first ambient environment that increases the etch resistance of the pattern of recessed features to an etchant that facilitates etching of a layer material within the trench that is arranged between the feature material and the filling material, to thereby modify at least an upper part of the pattern of recessed features. The layer material is partially etched with the etchant to form a recessed layer such that the layer material still remains between the filling material and the pattern of recessed features. The substrate is exposed to a second ambient environment that at least partially reverses modification of the upper part of the pattern of recessed features.