The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Sep. 25, 2023
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Kazuhiro Harada, Toyama, JP;

Masayoshi Minami, Toyama, JP;

Shintaro Kogura, Toyama, JP;

Shogo Otani, Toyama, JP;

Yoshitomo Hashimoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); C23C 16/308 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/0214 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02301 (2013.01); H01L 21/02323 (2013.01); H01L 21/02326 (2013.01); H01L 21/02211 (2013.01);
Abstract

There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.


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