The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Dec. 30, 2022
Applicant:
Nscore, Inc., Fukuoka, JP;
Inventors:
Kazuhiko Oyama, Fukuoka, JP;
Tadahiko Horiuchi, Fukuoka, JP;
Assignee:
NSCore, Inc., Fukuoka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/00 (2023.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01); H10B 43/00 (2023.02);
Abstract
A semiconductor memory device includes a bit line pairs, a source line, a word line, and a memory cell array including a plurality of memory cells arranged in a row and column directions, wherein the memory cell is a pair of p-type transistors formed on an n-type well, wherein one of terminals of the transistor is a Schottky barrier junction consisting of a metal thin film formed on the n-type well, and the other terminal is connected to the source line.