The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Nov. 08, 2022
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Chih-Sheng Lin, Tainan, TW;

Tuo-Hung Hou, Hsinchu, TW;

Fu-Cheng Tsai, Tainan, TW;

Jian-Wei Su, Hsinchu, TW;

Kuo-Hua Tseng, Yilan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/41 (2006.01); G11C 11/412 (2006.01); G11C 11/418 (2006.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 11/418 (2013.01);
Abstract

Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.


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