The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

May. 23, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyung-Min Kim, Seoul, KR;

Haesick Sul, Suwon-si, KR;

Sunyool Kang, Suwon-si, KR;

Yunhong Kim, Hwaseong-si, KR;

Seungmin Suh, Seongnam-si, KR;

Hyeonji Lee, Chuncheon-si, KR;

Yunhwan Jung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01); E03C 1/086 (2006.01); G05F 1/46 (2006.01);
U.S. Cl.
CPC ...
G05F 3/265 (2013.01); E03C 1/086 (2013.01); G05F 1/461 (2013.01); G05F 1/468 (2013.01);
Abstract

Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.


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