The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Sep. 29, 2022
Xmems Labs, Inc., Santa Clara, CA (US);
Jemm Yue Liang, Sunnyvale, CA (US);
Chiung C. Lo, San Jose, CA (US);
Martin George Lim, Hillsborough, CA (US);
Wen-Chien Chen, New Taipei, TW;
Michael David Housholder, San Jose, CA (US);
David Hong, Los Altos, CA (US);
xMEMS Labs, Inc., Santa Clara, CA (US);
Abstract
A manufacturing method for a device includes: providing a wafer including a first layer and a second layer; forming and patterning an actuating material formed on the wafer; patterning the first layer of the wafer to form a trench line; and removing a first part of the second layer. The first layer forms a film structure including a membrane. A slit is formed within and penetrates through the membrane because of the trench line. The film structure is actuated to form a vent temporarily because of the slit. An ear canal and an ambient of a wearable sound device are to be connected via the vent temporarily opened. The slit divides the membrane into a first membrane portion and a second membrane portion. A difference between the displacements of these two membrane portions is larger than a thickness of the membrane when the vent is formed.