The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Dec. 28, 2021
International Business Machines Corporation, Armonk, NY (US);
Timothy Mathew Philip, Albany, NY (US);
Kevin W. Brew, Niskayuna, NY (US);
Caitlin Camille Stuckey, Albany, NY (US);
Rebecca Colby Martin, Greenfield Center, NY (US);
Robert Robison, Rexford, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A phase change memory (PCM) cell includes a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, and a phase change section positioned between the first electrode and the second electrode. The phase change section includes a first phase change material having a first resistance drift coefficient, and a second phase change material having a second resistance drift coefficient that is greater than the first resistance drift coefficient. An axis of the PCM cell extends between the first electrode and the second electrode, and the second phase change material is offset from the first phase change material in a direction that is perpendicular to the axis.