The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H10K 50/844 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01);

U.S. Cl.

CPC ...

H10K 50/844 (2023.02); H10K 59/121 (2023.02); H10K 59/122 (2023.02); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H10K 59/1201 (2023.02);

Abstract

A method includes providing an active pattern and gate metal patterns, and inorganic insulation layers respectively therebetween in a pixel area and each extending to a bending area, providing a first photoresist pattern defining a first opening in the bending area, providing by using the first photoresist pattern, at least one of the inorganic layers in the bending area which is etched, providing a remaining photoresist pattern defining a first remaining opening corresponding to the first opening and a second opening corresponding to the active pattern, and providing by using the remaining photoresist pattern, both a contact hole corresponding to the second opening and exposing the portion of the active pattern to outside the remaining photoresist pattern, and a portion of the base substrate corresponding to the first remaining opening and exposed to outside the remaining photoresist pattern.

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