The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jul. 08, 2024
Zhejiang Aiko Solar Energy Technology Co., Ltd., Jinhua, CN;
Zhuhai Fushan Aiko Solar Energy Technology Co., Ltd., Zhuhai, CN;
Tianjin Aiko Solar Energy Technology Co., Ltd., Tianjin, CN;
Guangdong Aiko Solar Energy Technology Co., Ltd., Foshan, CN;
ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Jinhua, CN;
ZHUHAI FUSHAN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Zhuhai, CN;
TIANJIN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Tianjin, CN;
GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Foshan, CN;
Abstract
A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.