The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Jun. 03, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Terumi Kambe, Kanagawa, JP;

Takeshi Matsunuma, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H10F 39/8063 (2025.01); H01L 21/3043 (2013.01); H01L 21/30604 (2013.01); H01L 21/308 (2013.01); H10F 39/802 (2025.01); H10F 39/807 (2025.01);
Abstract

Provided is a method for manufacturing a light detection device capable of suppressing optical color mixing while improving sensitivity. On a substrate in which a plurality of photoelectric conversion units is formed, anisotropic etching is performed from one surface side of the substrate to form a plurality of openings arranged in a lattice shape at predetermined intervals on the substrate to surround each photoelectric conversion unit. Subsequently, isotropic etching is performed from one surface side of the substrate to connect adjacent openings to each other, to form a lattice-shaped trench part on the substrate to surround each photoelectric conversion unit.


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