The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Nov. 12, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Hironari Otsuji, Kanagawa, JP;

Hiroyuki Kawano, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); G02B 3/00 (2006.01); G02B 5/20 (2006.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8063 (2025.01); G02B 3/0037 (2013.01); G02B 5/208 (2013.01); H10F 39/024 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/8057 (2025.01);
Abstract

The deterioration of the image quality of an imaging element is to be prevented. The imaging element includes an on-chip lens, a photoelectric conversion unit, and a plurality of in-layer lenses. The on-chip lens collects incident light from a subject. The photoelectric conversion unit performs photoelectric conversion on the collected incident light. The plurality of in-layer lenses that is arranged between the on-chip lens and the photoelectric conversion unit and that is configured to further collect the incident light that has passed through the on-chip lens. Furthermore, the plurality of in-layer lenses allows the incident light that has passed through any one of the plurality of in-layer lenses to be incident on the photoelectric conversion unit.


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