The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jun. 14, 2021
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Phillip R. Jahelka, Altadena, CA (US);
Rebecca D. Glaudell, Des Plaines, IL (US);
Harry A. Atwater, South Pasadena, CA (US);
Assignee:
California Institute of Technology, Pasadena, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 10/18 (2025.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H10F 10/163 (2025.01); H10F 19/80 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/20 (2025.01); H10K 30/10 (2023.01); H10K 30/50 (2023.01);
U.S. Cl.
CPC ...
H10F 10/18 (2025.01); H10F 10/163 (2025.01); H10F 19/804 (2025.01); H10F 77/1243 (2025.01); H10F 77/1437 (2025.01); H10F 77/211 (2025.01); H10K 30/10 (2023.02); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H10K 30/50 (2023.02);
Abstract
Systems and methods of non-epitaxial high Schottky barriers heterojunction solar cells are described. The high Schottky barriers heterojunction solar cells are formed using non-epitaxial methods to reduce fabrication costs and improve scalability.