The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Sep. 07, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;
Kanta Sugimoto, Yokohama Kanagawa, JP;
Yukitami Mizuno, Tokyo, JP;
Kazushige Yamamoto, Yokohama Kanagawa, JP;
Mutsuki Yamazaki, Yokohama Kanagawa, JP;
Naoyuki Nakagawa, Tokyo, JP;
Soichiro Shibasaki, Tokyo, JP;
Yasutaka Nishida, Tokyo, JP;
Yuya Honishi, Saitama Saitama, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki, JP;
Abstract
A solar cell according to an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer on the p-electrode, and an n-type layer between the p-type light-absorbing layer and the n-electrode. A first region is included in the p-type light-absorbing layer from a surface on the n-type layer side toward the p-electrode. The first region includes n-type dopant. A thickness of the first region is 1500 [nm] or more and a thickness of the p-type light-absorbing layer [nm]. A concentration of the n-type dopant of the first region is 1.0×10[cm] or more and 1.0×10[cm] or less. The concentration of the n-type dopant of the first region and a concentration of hole of the first region satisfy 10≤ the concentration of the n-type dopant/the concentration of hole ≤5.0×10.