The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Aug. 22, 2022
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Hitoshi Matsuura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/60 (2025.01); H01L 21/265 (2006.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/617 (2025.01); H01L 21/26513 (2013.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate, and a first polysilicon film. The semiconductor substrate has a first main surface and a second main surface that is an opposite surface of the first main surface. The semiconductor substrate has a first portion and a second portion. The semiconductor substrate is a collector region arranged on the second main surface located in the first portion, a cathode region arranged on the second main surface located in the second portion, a drift region arranged on the collector region and the cathode region, an emitter region arranged on the first main surface located in the first portion, a base region arranged between the emitter region and the collector region, and an anode region arranged on the first main surface located in the second portion.


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