The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Sep. 21, 2023
United Semiconductor Japan Co., Ltd., Kuwana, JP;
Fumitaka Ohno, Kuwana, JP;
Makoto Yasuda, Kuwana, JP;
United Semiconductor Japan Co., Ltd., Kuwana, JP;
Abstract
A semiconductor device includes a substrate, a gate structure, a source region, a drain region, a doped region, and a channel region. The gate structure is disposed in the substrate, and the source region and drain regions being a first conductivity type respectively disposed at two sides of the gate structure. The doped region being a second conductivity type different from the first conductivity type is disposed below and separated from the gate structure, the source region, and drain region, the doped region. The channel region is disposed between the doped region and the gate structure and in contact with the doped region, and a dopant concentration of the channel region is less than a dopant concentration of the doped region.