The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Sep. 08, 2022
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventor:
Guk Hwan Kim, Cheongju-si, KR;
Assignee:
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 62/112 (2025.01); H10D 64/01 (2025.01); H10D 64/258 (2025.01); H10D 64/514 (2025.01); H10D 89/601 (2025.01);
Abstract
A semiconductor device includes a source region, a drain region, and a gate insulating film formed on a substrate, a gate electrode formed on the gate insulating film, a first insulating film pattern formed to extend from the source region to a part of a top surface of the gate electrode, and a spacer formed on a side surface of the gate electrode in a direction of the drain region.