The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Apr. 17, 2020
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Pengfei Gu, Beijing, CN;

Fengjuan Liu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01);
Abstract

The present disclosure provides a TFT. The TFT includes an active layer and a gate insulating layer, the active layer includes a first active sub-layer and a second active sub-layer which are arranged in a stacked manner, the second active sub-layer is between the gate insulating layer and the first active sub-layer, a Fermi potential of the first active sub-layer is larger than a Fermi potential of the second active sub-layer, a maximum thickness of a depletion region in the first active sub-layer is equal to a thickness of the first active sub-layer, and a maximum thickness of a depletion region in the second active sub-layer is equal to a thickness of the second active sub-layer.


Find Patent Forward Citations

Gu, Pengfei. (2025). Thin film transistor and manufacturing method thereof, array substrate, and display device (U.S. Patent No. 12402356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12402356

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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