The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jul. 21, 2022
Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
An IGBT device includes an p-type collector region, an n-type semiconductor layer, several p-type body regions located in the n-type semiconductor layer, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a shielded gate located in a lower part of the gate trench, and a gate located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other. Among the several p-type body regions, at least one p-type body region has a first doping concentration and is defined as a first p-type body region, and at least one p-type body region has a second doping concentration and is defined as a second p-type body region.