The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jun. 21, 2022
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Koichi Nishi, Tokyo, JP;
Masanori Tsukuda, Tokyo, JP;
Shinya Soneda, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 30/668 (2025.01); H10D 62/393 (2025.01); H10D 64/513 (2025.01);
Abstract
When a positive gate voltage is applied to a first one of a first gate electrode and a second gate electrode, and current flows from a collector electrode to an emitter electrode, a semiconductor device applies a positive gate voltage to a second one of the first gate electrode and the second gate electrode. When a positive gate voltage is applied to the first one and current flows from the emitter electrode to the collector electrode, the semiconductor device applies voltage equal to or less than reference voltage to the second one.