The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Dec. 05, 2022
Renesas Electronics Corporation, Tokyo, JP;
Shotaro Kudo, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes an insulating layer (IFL) on a semiconductor substrate (SUB), a conductive film (PL) on the insulating layer (IFL), an interlayer insulating film (IL) covering the conductive film (PL), a contact hole (CH) in the interlayer insulating film (IL), the conductive film (PL) and the insulating layer (IFL), and a plug (PG) embedded in the contact hole (CH). A side surface of the interlayer insulating film (IL) is separated from a side surface of the conductive film (PL) to expose a part of an upper surface of the conductive film (PL), and a side surface of the insulating layer (IFL) is separated from the side surface of the conductive film (PL) to expose a part of a lower surface of the conductive film (PL). A distance (L) from the lower surface of the conductive film (PL) to the bottom of the contact hole (CH) is longer than a distance (L) from the side surface of the conductive film (PL) to the side surface of the interlayer insulating film (IL).