The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Apr. 15, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yonghoon Son, Yongin-si, KR;

Junhyoung Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor device and a data storage system including the same are provided. The semiconductor device including a plate layer, a pattern structure on the plate layer, an upper pattern layer on the pattern structure, an upper structure including a stack structure and a capping insulating structure covering at least a portion of the stack structure, the stack structure including interlayer insulating layers and gate layers alternately stacked on each other, and separation structures and vertical memory structures penetrating through the upper structure, the upper pattern layer, and the pattern structure, and extending into the plate layer may be provided.


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