The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Sep. 23, 2021
Semiconductor device with improved cell density and manufacturing method of the semiconductor device
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Mi Seong Park, Icheon-si, KR;
Jang Won Kim, Icheon-si, KR;
In Su Park, Icheon-si, KR;
Jung Shik Jang, Icheon-si, KR;
Won Geun Choi, Icheon-si, KR;
Jung Dal Choi, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/48 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/481 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02);
Abstract
A semiconductor device includes a gate structure including conductive layers and insulating layers alternately stacked with each other, channel structures passing through the gate structure and arranged in a first direction, a cutting structure extending in the first direction and passing through the channel structures, and a first slit structure passing through the gate structure and extending in a second direction crossing the first direction.