The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Nov. 18, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Jen-I Lai, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/482 (2023.02);
Abstract
A semiconductor structure includes a substrate, a bit line structure, an oxide barrier layer, and a bit line capping layer. The bit line structure is disposed on the substrate, in which the bit line structure includes a conductive silicon layer, a conductive layer, and a hard mask layer. The conductive layer is disposed on the conductive silicon layer, in which the conductive layer includes a metal. The hard mask layer is disposed on the conductive layer. The oxide barrier layer is disposed in direct contact with a sidewall of the bit line structure. The bit line capping layer covers the oxide barrier layer.