The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Sep. 27, 2023
Wenzhou University, Zhejiang, CN;
Gang Li, Zhejiang, CN;
Pengjun Wang, Zhejiang, CN;
Xilong Shao, Zhejiang, CN;
Hui Li, Zhejiang, CN;
Junjie Zhou, Zhejiang, CN;
Wenzhou University, Zhejiang, CN;
Abstract
A PUF circuit based on the threshold loss of MOSFETs comprises N stages of delay units and an arbiter. Each stage of delay unit comprises six inverters and four MOS transistors, wherein the four MOS transistors are all PMOS transistors or NMOS transistors. Each path in each stage of delay unit uses only one PMOS or NMOS transistor and does not use a transmission gate formed by a PMOS transistor and an NMOS transistor. Therefore, it reduces hardware cost. Each MOS transistor on the transmission path has a threshold loss, PMOS and NMOS transistors in a third inverter and a sixth inverter are in an on-state, and output terminals of the third inverter and the sixth inverter will be charged to a high level or discharged to a low level, thus greatly increasing a delay difference between two square signals and enhancing randomness.