The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Feb. 02, 2022
Applicant:

Hitachi Astemo, Ltd., Ibaraki, JP;

Inventors:

Nobuyasu Kanekawa, Tokyo, JP;

Takao Fukuda, Ibaraki, JP;

Hiroshi Nakano, Tokyo, JP;

Assignee:

HITACHI ASTEMO, LTD., Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 5/04 (2006.01); G01R 19/165 (2006.01); G01R 31/26 (2020.01); H02J 7/00 (2006.01);
U.S. Cl.
CPC ...
H02H 5/041 (2013.01); H02J 7/00304 (2020.01); H02J 7/00309 (2020.01);
Abstract

An electronic control system includes first through third measurement units that measure current, temperature and current or temperature, respectively. An electronic control device controls an operation of a power semiconductor element by using measurement results of the first through third measurement units. At least a part of the power semiconductor element incorporates the first and second measurement units, and the electronic control device estimates temperature from a measured value of the current. Whether the first measurement unit, the second measurement unit, and the third measurement unit are normal or abnormal on a basis of a measured value of the first measurement unit is determined, and an abnormality is determined of at least one of the power semiconductor element and a wire harness through which an output current of the power semiconductor element flows according to a measurement result of the measurement unit determined to be normal.


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