The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Feb. 20, 2023
Applicants:

Guangdong Brunp Recycling Technology Co., Ltd., Guangdong, CN;

Hunan Brunp Recycling Technology Co., Ltd., Hunan, CN;

Hunan Brunp Ev Recycling Co., Ltd., Hunan, CN;

Inventors:

Maohua Feng, Guangdong, CN;

Changdong Li, Guangdong, CN;

Xingyu Wu, Guangdong, CN;

Dingshan Ruan, Guangdong, CN;

Baoye Liu, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); H01M 4/587 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); H01M 4/587 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01);
Abstract

The present disclosure discloses a preparation method for a silicon/carbon composite anode material and use of thereof. The preparation method includes the following steps: heating a hypercrosslinked polymer in an inert atmosphere for carbonization to obtain a porous carbide; mixing the porous carbide with a silicon-containing solution to obtain a silicon-containing porous carbide suspension; and adding a complexing agent, a metal salt, and a reducing agent to the silicon-containing porous carbide suspension to allow a reaction, and after the reaction is completed, conducting solid-liquid separation to obtain a solid, and heating the solid in an inert atmosphere to obtain the silicon/carbon composite anode material. In the present disclosure, the metal salt is reduced with the reducing agent under an action of the complexing agent through a metal-embedded-into-silicon treatment, such that a metal layer is formed on a silicon layer adsorbed on the porous carbide.


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