The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Mar. 06, 2024
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Katsuhiko Yoshihara, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/49562 (2013.01); H01L 23/53209 (2013.01); H01L 24/06 (2013.01); H01L 2224/49433 (2013.01);
Abstract

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.


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