The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

May. 16, 2023
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tse-Yao Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76837 (2013.01); H01L 21/76841 (2013.01); H01L 21/76885 (2013.01); H01L 23/5329 (2013.01);
Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of first conductive structures positioned on the substrate; a plurality of outer liner layer each positioned on a corresponding sidewall of the plurality of first conductive structures; and a plurality of bottom inter-feature dielectric layers positioned on the plurality of outer liner layers and between the plurality of first conductive structures. Each of the outer liner layers includes one or more species of vanadium oxide. The plurality of bottom inter-feature dielectric layers are porous.


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