The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Apr. 01, 2025
Industry-academic Cooperation Foundation Gyeongsang National University, Jinju-si, KR;
Jun Hong Park, Jinju-si, KR;
Abstract
As a field effect transistor (FET) having a transition metal dichalcogenide capped with a hydrocarbon (HC) protective film according to a preferred embodiment as a channel layer forms a dielectric thin film having a large area of a centimeter scale as a protective film on the surface of the transition metal dichalcogenide, the problem of lowering the electrical performance of the field effect transistor, which is generated due to scattering or trapping of carriers within the channel as impurity molecules such as oxygen, moisture, and the like existing in the surrounding environment are adsorbed on the surface of the transition metal dichalcogenide and act as defects, can be solved, and stability of long-term storage can be improved.