The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Oct. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Youncheol Jeong, Hwaseong-si, KR;
Jaeung Koo, Seoul, KR;
Boun Yoon, Suwon-si, KR;
Ilyoung Yoon, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode extending in a second direction and crossing the active pattern, a gate capping pattern covering a top surface of the gate electrode, and a separation structure at a side of the gate electrode and extending in the second direction to penetrate the active pattern in a third direction. The first and second directions are parallel to a bottom surface of the substrate and are perpendicular to the third direction. The separation structure may include a filling pattern, which extends in the third direction to penetrate the active pattern, and a vertical insulating pattern, which is interposed between the filling pattern and the gate electrode. A top surface of the separation structure may be located at a height lower than a top surface of the gate capping pattern.