The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Sep. 14, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Masayoshi Iwayama, Seoul, KR;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

According to one embodiment, a memory device includes first and second wiring lines, memory cells between the first and second wiring lines, each includes a resistance change memory element and a switching element, and a determination operation control circuit configured to acquire a determination target voltage, acquire a reference voltage, and determine, based on a voltage difference between the determination target voltage and the reference voltage, a determination target resistance state that was set in the resistance change memory element. The determination target voltage acquisition time point and the reference voltage acquisition time point vary according to the selected memory cell.


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