The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Sep. 15, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Garam Choi, Suwon-si, KR;

Yonghun Kim, Suwon-si, KR;

Kihan Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1048 (2013.01); G11C 2207/2254 (2013.01);
Abstract

Provided are a memory device and a method for training per-pin operation parameters. A memory device includes a plurality of on-die termination (ODT) circuits, an impedance control (ZQ) calibration circuit configured to output a first code signal and a second code signal, and a per-pin calibration circuit. The per-pin calibration circuit may be configured to select one signal pin from among the plurality of signal pins, to compare a first input voltage level of the selected signal pin with a second input voltage level of each of the other ones of the plurality of signal pins, to generate a per-pin ODT code signal for each of the plurality of signal pins, to combine the per-pin ODT code signal with the first code signal or the second code signal, and to provide the combined per-pin ODT code signal to the respective ODT circuits.


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