The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Nov. 21, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Sergey Anatolievich Gorobets, Edinburgh, GB;

Alan D. Bennett, Edinburgh, GB;

Liam Parker, Edinburgh, GB;

Yuval Shohet, Acton, MA (US);

Michelle Martin, Westford, MA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/064 (2013.01); G06F 3/0626 (2013.01); G06F 3/0673 (2013.01); G06F 11/1004 (2013.01);
Abstract

The present disclosure generally relates to improving programming to data storage devices, such as solid state drives (SSDs). A first memory device has a first XOR element and a second memory device has a second XOR element. The ratio of the first XOR element to the capacity of the first memory device is substantially smaller than the ratio of the second XOR element to the capacity of the second memory device. A read verify operation to find program failures is executed on either a wordline to wordline basis, an erase block to erase block basis, or both a wordline to wordline basis and an erase block to erase block basis. Because the program failures are found and fixed prior to programming to the second memory device, the second XOR element may be decreased substantially.


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