The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jan. 24, 2024
Hrl Laboratories, Llc, Malibu, CA (US);
Kyung-Ah Son, Moorpark, CA (US);
Pamela R. Patterson, Los Angeles, CA (US);
Hwa Chang Seo, Torrance, CA (US);
Jack A. Crowell, Camarillo, CA (US);
Joshua M. Doria, Moorpark, CA (US);
Mariano J. Taboada, Oxnard, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A high-resistivity N-doped ruthenium oxide thin film is formed on a substrate by flowing argon and nitrogen gases in a sputter chamber that includes a preconditioned ruthenium oxide sputter target. The method includes forming a plasma and sputter depositing a high-resistivity N-doped ruthenium oxide thin film with a N/Ru atomic ratio between 0.5 and 3.0 and resistivity greater than 0.01 Ω cm on the substrate in the substrate. A high-resistivity H-doped ruthenium oxide thin film is formed on a substrate by first forming an oxygen-rich ruthenium oxide thin film, followed by a hydrogen anneal. A temperature sensor structure includes a high-resistivity ruthenium oxide thin film that is doped with nitrogen or hydrogen and has a resistivity between 0.01 and 1 Ω cm.