The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Oct. 01, 2021
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Abstract
Provided is a memristor including an active electrode made of a first conductive material including an active metal; an inert electrode spaced from and facing toward the active electrode and made of a second conductive material having an ionization energy greater than the ionization energy of the first conductive material; and a resistive switching layer including: a porous insulating layer disposed between the active electrode and the inert electrode, wherein the porous insulating layer has through-channel holes defined therein extending from a bottom face to a top face thereof; and conductive filaments respectively formed inside the through-channel holes.