The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

May. 16, 2023
Applicant:

Google Llc, Mountain View, CA (US);

Inventor:

Anthony Edward Megrant, Goleta, CA (US);

Assignee:

Google LLC, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/01 (2023.01); G06N 10/40 (2022.01);
U.S. Cl.
CPC ...
H10N 60/0912 (2023.02); G06N 10/40 (2022.01); H10N 60/01 (2023.02);
Abstract

A method for forming at least part of a quantum information processing device is presented. The method includes providing a first electrically-conductive layer formed of a first electrically-conductive material on a principal surface of a substrate, depositing a layer of dielectric material on the first electrically-conductive material, patterning the layer of dielectric material to form a pad of dielectric material and to reveal a first region of the first electrically-conductive layer, depositing a second electrically-conductive layer on the pad of dielectric material and on the first region of the first electrically-conductive layer, patterning the second electrically-conductive layer and removing the pad of dielectric material using isotropic gas phase etching.


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