The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Aug. 08, 2023
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Seong-Pil Cho, Goyang-si, KR;

Dong-Yup Kim, Gimpo-si, KR;

Kyung-Mo Son, Paju-si, KR;

Sang-Soon Noh, Goyang-si, KR;

Jun-Seuk Lee, Seoul, KR;

Yong-Bin Kang, Gumi-si, KR;

Kye-Chul Choi, Seoul, KR;

Sung-Ho Moon, Gumi-si, KR;

Sang-Gul Lee, Seoul, KR;

Byeong-Keun Kim, Gimpo-si, KR;

Kyoung-Soo Lee, Paju-si, KR;

Hyun-Gyo Jeong, Daegu, KR;

Jin-Kyu Roh, Gimcheon-si, KR;

Jung-Doo Jin, Gumi-si, KR;

Ki-Hyun Kwon, Gumi-si, KR;

Hee-Jin Jung, Busan, KR;

Jang-Dae Kim, Daegu, KR;

Won-Ho Son, Busan, KR;

Chan-Ho Kim, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10D 30/6731 (2025.01); H10D 30/6739 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01);
Abstract

A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.


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