The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Aug. 15, 2022
Applicant:

Raynergy Tek Incorporation, Hsinchu, TW;

Inventor:

Yi-Ming Chang, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10K 30/81 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
H10K 30/81 (2023.02); H10K 71/621 (2023.02);
Abstract

A method of patterning semiconductor layer includes the following operations. A first electrode and a second electrode are formed within a substrate. A patterned polymer layer with a first portion on a portion of the second electrode and a second portion on an edge portion of the substrate is formed on the substrate. A semiconductor layer is deposited on the patterned polymer layer, the substrate, and the first electrode. The first portion of the patterned polymer layer and the semiconductor layer on the first portion are removed to form a through-hole in the semiconductor layer that exposes the portion of the second electrode. A conductive block is deposited on the semiconductor layer and in the through-hole.


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