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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12396313 B1

PDFFull Text
Date of Patent:
Aug. 19, 2025

Filed:

Mar. 16, 2020

Solar cell

Applicant:

Sekisui Chemical Co., Ltd., Osaka, JP;

Inventors:

Akinobu Hayakawa, Osaka, JP;

Takurou Okumura, Ibaraki, JP;

Takeshi Fukuda, Tokyo, JP;

Assignee:

SEKISUI CHEMICAL CO., LTD., Osaka, JP;

Attorney:

Wenderoth, Lind & Ponack, L.L.P.

Primary Examiner:

Bo B Jang

Int. Cl.
CPC ...
H10K 30/81 (2023.01); H10K 30/00 (2023.01); H10K 30/82 (2023.01); H10K 30/85 (2023.01); H10K 30/87 (2023.01); H10K 85/50 (2023.01);
U.S. Cl.
CPC ...
H10K 30/81 (2023.02); H10K 30/451 (2023.02); H10K 30/82 (2023.02); H10K 30/87 (2023.02); H10K 85/50 (2023.02); H10K 30/85 (2023.02);
Abstract

The present invention aims to provide a solar cell having high photoelectric conversion efficiency that is less likely to decrease even under prolonged application of a voltage. Provided is a solar cell including a cathode, a photoelectric conversion layer, a diffusion prevention layer, and an anode in the stated order, the cathode being a transparent electrode, the anode containing at least one selected from the group consisting of aluminum, copper, antimony, and molybdenum, the photoelectric conversion layer containing an organic-inorganic perovskite compound represented by the formula AMX wherein A represents an organic base compound and/or an alkali metal, M represents a lead or tin atom, and X represents a halogen atom, the diffusion prevention layer being a diffusion prevention layer that contains molybdenum, tungsten, tantalum, niobium, zirconium, hafnium, or an alloy of two or more thereof and has a thickness of 5 to 30 nm, a diffusion prevention layer that contains an oxide containing titanium, gallium, zinc, tin, indium, antimony, molybdenum, tungsten, vanadium, chromium, nickel, or lead, a diffusion prevention layer that contains a nitride containing titanium, vanadium, chromium, niobium, tantalum, molybdenum, zirconium, or hafnium and has a thickness of 5 to 50 nm, or a diffusion prevention layer that contains graphite and has a thickness of 2 nm to 50 nm.

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