The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Apr. 20, 2022
North Carolina State University, Raleigh, NC (US);
Salah M. Bedair, Raleigh, NC (US);
NORTH CAROLINA STATE UNIVERSITY, Raleigh, NC (US);
Abstract
Various examples are provided related to InGaN-relaxed templates. In one example, a device structure includes a GaN layer; and a semibulk template comprising a plurality of stacked periods on the GaN layer. Each period can include a layer of InGaN and a GaN interlayer disposed on the layer of InGaN, where a thickness of the GaN interlayer of a top period of the stacked periods is greater than a thickness of the GaN interlayer of a bottom period disposed on the GaN layer. In another example, a method includes forming a GaN layer and forming a semibulk template including a plurality of stacked periods on the GaN layer. Each period can include a layer of InGaN and a GaN interlayer disposed on the layer of InGaN, where a thickness of the GaN interlayer of the top period is greater than the GaN interlayer of the bottom period.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile