The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Sep. 28, 2023
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventors:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10D 30/63 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 84/90 (2025.01); H10F 39/12 (2025.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H10F 39/80377 (2025.01); H10D 30/63 (2025.01); H10D 62/122 (2025.01); H10D 62/292 (2025.01); H10D 84/907 (2025.01); H10F 39/12 (2025.01); H10F 39/199 (2025.01); H10K 39/32 (2023.02); H01L 2924/13086 (2013.01); Y10S 977/938 (2013.01);
Abstract
A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.