The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Apr. 12, 2024
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Hideaki Togashi, Kanagawa, JP;

Kosuke Nakanishi, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H01L 23/48 (2006.01); H10D 30/63 (2025.01); H10D 62/13 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01); H10D 30/60 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80373 (2025.01); H01L 23/481 (2013.01); H10D 30/63 (2025.01); H10D 62/151 (2025.01); H10D 64/513 (2025.01); H10D 64/518 (2025.01); H10D 84/0142 (2025.01); H10D 84/016 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10F 39/014 (2025.01); H10F 39/182 (2025.01); H10F 39/192 (2025.01); H10F 39/811 (2025.01); H10F 39/812 (2025.01); H10D 30/60 (2025.01); H10D 84/013 (2025.01); H10D 88/101 (2025.01); H10F 39/199 (2025.01);
Abstract

A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.


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