The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Dec. 21, 2021
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventor:
Frank Dieter Pfirsch, Munich, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/60 (2025.01); H01L 21/265 (2006.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/617 (2025.01); H01L 21/26513 (2013.01); H10D 8/045 (2025.01); H10D 8/422 (2025.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01);
Abstract
An RC IGBT includes an IGBT section and a diode section. At least some of a plurality of diode mesas in the diode section are coupled to the drift region via a second anode region electrically connected to the emitter terminal of the RC IGBT. The second anode region extends deeper along the vertical direction as compared to trenches in the diode section.