The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jun. 27, 2022
Applicant:
Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
Inventors:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/281 (2025.01); H10D 12/481 (2025.01);
Abstract
An IGBT device includes a p-type collector region, an n-type semiconductor layer located above the p-type collector region, a plurality of gate trenches, shielded gates, gates, and a p-type body region located in the n-type semiconductor layer and between adjacent gate trenches. The gate trenches are located in the n-type semiconductor layer. A shielded gate is located in a lower part of a gate trench. A gate is located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other.