The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Jun. 30, 2023
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tse-Yao Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/63 (2025.01); H01L 23/522 (2006.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/63 (2025.01); H01L 23/5226 (2013.01); H10D 64/01 (2025.01); H10D 64/252 (2025.01); H10D 64/513 (2025.01);
Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a word line structure positioned in the substrate; a plurality of impurity regions positioned in the substrate and adjacent to the word line structure; a plurality of bottom shallow contacts positioned on the word line structure; a first interconnect layer positioned on the plurality of bottom shallow contacts; a plurality of top shallow contacts positioned on the first interconnect layer; and a plurality of deep contacts positioned on the plurality of impurity regions. Top surfaces of the plurality of top shallow contacts and top surfaces of the plurality of deep contacts are substantially coplanar.


Find Patent Forward Citations

Loading…