The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Oct. 03, 2022
Hdu Fuyang Electronic Information Research Institute Co., Ltd., Zhejiang, CN;
Hangzhou Dianzi University, Hangzhou, CN;
Zhiqun Cheng, Zhejiang, CN;
Chao Le, Zhejiang, CN;
HangZhou DianZi University, Hangzhou, CN;
HDU Fuyang Electronic Information Research Institute Co., Ltd., Hangzhou, CN;
Abstract
It is provided a high-linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal, including a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence. A source, a gate, and a drain are arranged on the protection layer. A first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer. The source, the gate, and the drain are configured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the second two-dimensional electron gas formed by the channel layer. In case of the large signal, electrons in the second two-dimensional electron gas flow into the first two-dimensional electron gas.